IPP65R310CFDAAKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP65R310CFDAAKSA1 is a IPP65R310CFDAAKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 11.4A 310mΩ@4.4A,10V 104.2W 4.5V@440uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 11.4A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 310mΩ@4.4A,10V
• Power Dissipation (Pd): 104.2W
• Gate Threshold Voltage (Vgs(th)@Id): 4.5V@440uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.11nF@100V
• Total Gate Charge (Qg@Vgs): 41nC@10V
• Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.