IPP65R600E6 by Infineon Technologies – Specifications

Infineon Technologies IPP65R600E6 is a IPP65R600E6 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 7.3A 600mΩ@2.1A,10V 63W 3.5V@210uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 7.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@2.1A,10V
  • Power Dissipation (Pd): 63W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@210uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 440pF@100V
  • Total Gate Charge (Qg@Vgs): 23nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPP65R600E6

Model NumberIPP65R600E6
Model NameInfineon Technologies IPP65R600E6
CategoryMOSFETs
BrandInfineon Technologies
Description650V 7.3A 600mΩ@2.1A,10V 63W 3.5V@210uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)7.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)600mΩ@2.1A,10V
Power Dissipation (Pd)63W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@210uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)440pF@100V
Total Gate Charge (Qg@Vgs)23nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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