IPP70N04S3-07 by Infineon Technologies – Specifications

Infineon Technologies IPP70N04S3-07 is a IPP70N04S3-07 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 80A 79W 6.5mΩ@70A,10V 4V@50uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 80A
  • Power Dissipation (Pd): 79W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.5mΩ@70A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@50uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.7nF@25V
  • Total Gate Charge (Qg@Vgs): 40nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPP70N04S3-07

Model NumberIPP70N04S3-07
Model NameInfineon Technologies IPP70N04S3-07
CategoryMOSFETs
BrandInfineon Technologies
Description40V 80A 79W 6.5mΩ@70A,10V 4V@50uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)80A
Power Dissipation (Pd)79W
Drain Source On Resistance (RDS(on)@Vgs,Id)6.5mΩ@70A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@50uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.7nF@25V
Total Gate Charge (Qg@Vgs)40nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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