IPP80CN10NGXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP80CN10NGXKSA1 is a IPP80CN10NGXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 13A 80mΩ@13A,10V 31W 4V@12uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 13A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@13A,10V
  • Power Dissipation (Pd): 31W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@12uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 716pF@50V
  • Total Gate Charge (Qg@Vgs): 11nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPP80CN10NGXKSA1

Model NumberIPP80CN10NGXKSA1
Model NameInfineon Technologies IPP80CN10NGXKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description100V 13A 80mΩ@13A,10V 31W 4V@12uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)13A
Drain Source On Resistance (RDS(on)@Vgs,Id)80mΩ@13A,10V
Power Dissipation (Pd)31W
Gate Threshold Voltage (Vgs(th)@Id)4V@12uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)716pF@50V
Total Gate Charge (Qg@Vgs)11nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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