IPP80N03S4L-03 by Infineon Technologies – Specifications

Infineon Technologies IPP80N03S4L-03 is a IPP80N03S4L-03 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 80A 2.3mΩ@10V,80A 136W 1.5V@90uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.3mΩ@10V,80A
  • Power Dissipation (Pd): 136W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@90uA
  • Reverse Transfer Capacitance (Crss@Vds): 100pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 7.5nF@25V
  • Total Gate Charge (Qg@Vgs): 110nC@0~10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPP80N03S4L-03

Model NumberIPP80N03S4L-03
Model NameInfineon Technologies IPP80N03S4L-03
CategoryMOSFETs
BrandInfineon Technologies
Description30V 80A 2.3mΩ@10V,80A 136W 1.5V@90uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.3mΩ@10V,80A
Power Dissipation (Pd)136W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@90uA
Reverse Transfer Capacitance (Crss@Vds)100pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)7.5nF@25V
Total Gate Charge (Qg@Vgs)110nC@0~10V
Operating Temperature-55℃~+175℃@(Tj)

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