IPP80N03S4L03AKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP80N03S4L03AKSA1 is a IPP80N03S4L03AKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 80A 136W 2.7mΩ@80A,10V 2.2V@90uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 80A
  • Power Dissipation (Pd): 136W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.7mΩ@80A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@90uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.75nF@25V
  • Total Gate Charge (Qg@Vgs): 140nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.08 grams.

Full Specifications of IPP80N03S4L03AKSA1

Model NumberIPP80N03S4L03AKSA1
Model NameInfineon Technologies IPP80N03S4L03AKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 80A 136W 2.7mΩ@80A,10V 2.2V@90uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.080 grams / 0.108644 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)80A
Power Dissipation (Pd)136W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.7mΩ@80A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@90uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.75nF@25V
Total Gate Charge (Qg@Vgs)140nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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