IPP80N06S2-08 by Infineon Technologies – Specifications

Infineon Technologies IPP80N06S2-08 is a IPP80N06S2-08 from Infineon Technologies, part of the MOSFETs. It is designed for 55V 80A 8mΩ@10V,58A 215W 4V@150uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,58A
  • Power Dissipation (Pd): 215W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@150uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPP80N06S2-08

Full Specifications of IPP80N06S2-08

Model NumberIPP80N06S2-08
Model NameInfineon Technologies IPP80N06S2-08
CategoryMOSFETs
BrandInfineon Technologies
Description55V 80A 8mΩ@10V,58A 215W 4V@150uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@10V,58A
Power Dissipation (Pd)215W
Gate Threshold Voltage (Vgs(th)@Id)4V@150uA
Type1PCSNChannel

Compare Infineon Technologies - IPP80N06S2-08 With Other 200 Models

Related Models - IPP80N06S2-08 Alternative

Scroll to Top