IPP80N06S2L-05 by Infineon Technologies – Specifications

Infineon Technologies IPP80N06S2L-05 is a IPP80N06S2L-05 from Infineon Technologies, part of the MOSFETs. It is designed for 55V 80A 4.8mΩ@80A,10V 300W 2V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 55V
• Continuous Drain Current (Id): 80A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8mΩ@80A,10V
• Power Dissipation (Pd): 300W
• Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 5.7nF@25V
• Total Gate Charge (Qg@Vgs): 230nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.