IPP80N06S2L-06 by Infineon Technologies – Specifications

Infineon Technologies IPP80N06S2L-06 is a IPP80N06S2L-06 from Infineon Technologies, part of the MOSFETs. It is designed for 55V 80A 250W 6.3mΩ@69A,10V 2V@180uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 80A
  • Power Dissipation (Pd): 250W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.3mΩ@69A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@180uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.8nF@25V
  • Total Gate Charge (Qg@Vgs): 150nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPP80N06S2L-06

Full Specifications of IPP80N06S2L-06

Model NumberIPP80N06S2L-06
Model NameInfineon Technologies IPP80N06S2L-06
CategoryMOSFETs
BrandInfineon Technologies
Description55V 80A 250W 6.3mΩ@69A,10V 2V@180uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)80A
Power Dissipation (Pd)250W
Drain Source On Resistance (RDS(on)@Vgs,Id)6.3mΩ@69A,10V
Gate Threshold Voltage (Vgs(th)@Id)2V@180uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.8nF@25V
Total Gate Charge (Qg@Vgs)150nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - IPP80N06S2L-06 With Other 200 Models

Related Models - IPP80N06S2L-06 Alternative

Scroll to Top