IPP80N08S406AKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP80N08S406AKSA1 is a IPP80N08S406AKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 80V 80A 150W 5.8mΩ@80A,10V 4V@90uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 80A
  • Power Dissipation (Pd): 150W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.8mΩ@80A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@90uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.8nF@25V
  • Total Gate Charge (Qg@Vgs): 70nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPP80N08S406AKSA1

Model NumberIPP80N08S406AKSA1
Model NameInfineon Technologies IPP80N08S406AKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description80V 80A 150W 5.8mΩ@80A,10V 4V@90uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)80A
Power Dissipation (Pd)150W
Drain Source On Resistance (RDS(on)@Vgs,Id)5.8mΩ@80A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@90uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.8nF@25V
Total Gate Charge (Qg@Vgs)70nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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