IPS60R360PFD7S by Infineon Technologies – Specifications

Infineon Technologies IPS60R360PFD7S is a IPS60R360PFD7S from Infineon Technologies, part of the MOSFETs. It is designed for 650V 10A 360mΩ@10V,2.9A 43W 4.5V@140uA 1PCSNChannel TO-251-3 MOSFETs ROHS. This product comes in a TO-251-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 10A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 360mΩ@10V,2.9A
  • Power Dissipation (Pd): 43W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@140uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPS60R360PFD7S

Model NumberIPS60R360PFD7S
Model NameInfineon Technologies IPS60R360PFD7S
CategoryMOSFETs
BrandInfineon Technologies
Description650V 10A 360mΩ@10V,2.9A 43W 4.5V@140uA 1PCSNChannel TO-251-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-251-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)10A
Drain Source On Resistance (RDS(on)@Vgs,Id)360mΩ@10V,2.9A
Power Dissipation (Pd)43W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@140uA
Type1PCSNChannel

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