IPS60R3K4CEAKMA1 by Infineon Technologies – Specifications

Infineon Technologies IPS60R3K4CEAKMA1 is a IPS60R3K4CEAKMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 2.6A 3.4Ω@500mA,10V 3.5V@40uA 1PCSNChannel TO-251-3 MOSFETs ROHS. This product comes in a TO-251-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 2.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.4Ω@500mA,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@40uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 93pF@100V
  • Total Gate Charge (Qg@Vgs): 4.6nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPS60R3K4CEAKMA1

Model NumberIPS60R3K4CEAKMA1
Model NameInfineon Technologies IPS60R3K4CEAKMA1
CategoryMOSFETs
BrandInfineon Technologies
Description600V 2.6A 3.4Ω@500mA,10V 3.5V@40uA 1PCSNChannel TO-251-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-251-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)2.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.4Ω@500mA,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@40uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)93pF@100V
Total Gate Charge (Qg@Vgs)4.6nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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