IPS60R650CE by Infineon Technologies – Specifications

Infineon Technologies IPS60R650CE is a IPS60R650CE from Infineon Technologies, part of the MOSFETs. It is designed for 600V 9.9A 82W 650mΩ@10V,2.4A 3.5V@200uA 1PCSNChannel TO-251-3 MOSFETs ROHS. This product comes in a TO-251-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 9.9A
  • Power Dissipation (Pd): 82W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 650mΩ@10V,2.4A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@200uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPS60R650CE

Model NumberIPS60R650CE
Model NameInfineon Technologies IPS60R650CE
CategoryMOSFETs
BrandInfineon Technologies
Description600V 9.9A 82W 650mΩ@10V,2.4A 3.5V@200uA 1PCSNChannel TO-251-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-251-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)9.9A
Power Dissipation (Pd)82W
Drain Source On Resistance (RDS(on)@Vgs,Id)650mΩ@10V,2.4A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@200uA
Type1PCSNChannel

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