IPS80R2K4P7AKMA1 by Infineon Technologies – Specifications

Infineon Technologies IPS80R2K4P7AKMA1 is a IPS80R2K4P7AKMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 2.5A 2.4Ω@800mA,10V 22W 3.5V@40uA 1PCSNChannel TO-251-3 MOSFETs ROHS. This product comes in a TO-251-3 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 800V
• Continuous Drain Current (Id): 2.5A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 2.4Ω@800mA,10V
• Power Dissipation (Pd): 22W
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@40uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 150pF@500V
• Total Gate Charge (Qg@Vgs): 7.5nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.