IPSA70R600CEAKMA1 by Infineon Technologies – Specifications

Infineon Technologies IPSA70R600CEAKMA1 is a IPSA70R600CEAKMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 700V 10.5A 600mΩ@1A,10V 86W 3.5V@210uA 1PCSNChannel TO-251-3 MOSFETs ROHS. This product comes in a TO-251-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 700V
  • Continuous Drain Current (Id): 10.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@1A,10V
  • Power Dissipation (Pd): 86W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@210uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 474pF@100V
  • Total Gate Charge (Qg@Vgs): 22nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPSA70R600CEAKMA1

Model NumberIPSA70R600CEAKMA1
Model NameInfineon Technologies IPSA70R600CEAKMA1
CategoryMOSFETs
BrandInfineon Technologies
Description700V 10.5A 600mΩ@1A,10V 86W 3.5V@210uA 1PCSNChannel TO-251-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-251-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)700V
Continuous Drain Current (Id)10.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)600mΩ@1A,10V
Power Dissipation (Pd)86W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@210uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)474pF@100V
Total Gate Charge (Qg@Vgs)22nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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