IPT029N08N5ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPT029N08N5ATMA1 is a IPT029N08N5ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 80V 2.9mΩ@150A,10V 168W 3.8V@108uA 1PCSNChannel HSOF-8 MOSFETs ROHS. This product comes in a HSOF-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 52A;169A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.9mΩ@150A,10V
  • Power Dissipation (Pd): 168W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@108uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.5nF@40V
  • Total Gate Charge (Qg@Vgs): 87nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPT029N08N5ATMA1

Model NumberIPT029N08N5ATMA1
Model NameInfineon Technologies IPT029N08N5ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description80V 2.9mΩ@150A,10V 168W 3.8V@108uA 1PCSNChannel HSOF-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseHSOF-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)52A;169A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.9mΩ@150A,10V
Power Dissipation (Pd)168W
Gate Threshold Voltage (Vgs(th)@Id)3.8V@108uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.5nF@40V
Total Gate Charge (Qg@Vgs)87nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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