IPT044N15N5ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPT044N15N5ATMA1 is a IPT044N15N5ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 150V 174A 4.4mΩ@50A,10V 300W 4.6V@221uA 1PCSNChannel HSOF-8 MOSFETs ROHS. This product comes in a HSOF-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 174A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.4mΩ@50A,10V
  • Power Dissipation (Pd): 300W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.6V@221uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.5nF@75V
  • Total Gate Charge (Qg@Vgs): 84nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.34 grams.

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Full Specifications of IPT044N15N5ATMA1

Model NumberIPT044N15N5ATMA1
Model NameInfineon Technologies IPT044N15N5ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description150V 174A 4.4mΩ@50A,10V 300W 4.6V@221uA 1PCSNChannel HSOF-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.340 grams / 0.047267 oz
Package / CaseHSOF-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)174A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.4mΩ@50A,10V
Power Dissipation (Pd)300W
Gate Threshold Voltage (Vgs(th)@Id)4.6V@221uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.5nF@75V
Total Gate Charge (Qg@Vgs)84nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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