IPT059N15N3ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPT059N15N3ATMA1 is a IPT059N15N3ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 150V 155A 5.9mΩ@150A,10V 375W 4V@270uA 1PCSNChannel HSOF-8 MOSFETs ROHS. This product comes in a HSOF-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 155A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.9mΩ@150A,10V
  • Power Dissipation (Pd): 375W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@270uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 7.2nF@75V
  • Total Gate Charge (Qg@Vgs): 92nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.39 grams.

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Full Specifications of IPT059N15N3ATMA1

Model NumberIPT059N15N3ATMA1
Model NameInfineon Technologies IPT059N15N3ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description150V 155A 5.9mΩ@150A,10V 375W 4V@270uA 1PCSNChannel HSOF-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.390 grams / 0.049031 oz
Package / CaseHSOF-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)155A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.9mΩ@150A,10V
Power Dissipation (Pd)375W
Gate Threshold Voltage (Vgs(th)@Id)4V@270uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)7.2nF@75V
Total Gate Charge (Qg@Vgs)92nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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