IPT60R080G7XTMA1 by Infineon Technologies – Specifications

Infineon Technologies IPT60R080G7XTMA1 is a IPT60R080G7XTMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 29A 80mΩ@9.7A,10V 167W 4V@490uA 1PCSNChannel HSOF-8 MOSFETs ROHS. This product comes in a HSOF-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 29A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@9.7A,10V
  • Power Dissipation (Pd): 167W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@490uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.64nF@400V
  • Total Gate Charge (Qg@Vgs): 42nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.3 grams.

More on IPT60R080G7XTMA1

Full Specifications of IPT60R080G7XTMA1

Model NumberIPT60R080G7XTMA1
Model NameInfineon Technologies IPT60R080G7XTMA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 29A 80mΩ@9.7A,10V 167W 4V@490uA 1PCSNChannel HSOF-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.300 grams / 0.045856 oz
Package / CaseHSOF-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)29A
Drain Source On Resistance (RDS(on)@Vgs,Id)80mΩ@9.7A,10V
Power Dissipation (Pd)167W
Gate Threshold Voltage (Vgs(th)@Id)4V@490uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.64nF@400V
Total Gate Charge (Qg@Vgs)42nC@10V
Operating Temperature-40℃~+150℃@(Tj)

Compare Infineon Technologies - IPT60R080G7XTMA1 With Other 200 Models

Related Models - IPT60R080G7XTMA1 Alternative

Scroll to Top