IPT60R125CFD7XTMA1 by Infineon Technologies – Specifications

Infineon Technologies IPT60R125CFD7XTMA1 is a IPT60R125CFD7XTMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 21A 125mΩ@6.8A,10V 127W 4.5V@340uA 1PCSNChannel HSOF-8 MOSFETs ROHS. This product comes in a HSOF-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 21A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 125mΩ@6.8A,10V
  • Power Dissipation (Pd): 127W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@340uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.33nF@400V
  • Total Gate Charge (Qg@Vgs): 31nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPT60R125CFD7XTMA1

Full Specifications of IPT60R125CFD7XTMA1

Model NumberIPT60R125CFD7XTMA1
Model NameInfineon Technologies IPT60R125CFD7XTMA1
CategoryMOSFETs
BrandInfineon Technologies
Description600V 21A 125mΩ@6.8A,10V 127W 4.5V@340uA 1PCSNChannel HSOF-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseHSOF-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)21A
Drain Source On Resistance (RDS(on)@Vgs,Id)125mΩ@6.8A,10V
Power Dissipation (Pd)127W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@340uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.33nF@400V
Total Gate Charge (Qg@Vgs)31nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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