IPT65R033G7 by Infineon Technologies – Specifications

Infineon Technologies IPT65R033G7 is a IPT65R033G7 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 69A 33mΩ@10V,28.9A 391W [email protected] 1PCSNChannel HSOF-8 MOSFETs ROHS. This product comes in a HSOF-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 69A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@10V,28.9A
  • Power Dissipation (Pd): 391W
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.84 grams.

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Full Specifications of IPT65R033G7

Model NumberIPT65R033G7
Model NameInfineon Technologies IPT65R033G7
CategoryMOSFETs
BrandInfineon Technologies
Description650V 69A 33mΩ@10V,28.9A 391W [email protected] 1PCSNChannel HSOF-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.840 grams / 0.02963 oz
Package / CaseHSOF-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)69A
Drain Source On Resistance (RDS(on)@Vgs,Id)33mΩ@10V,28.9A
Power Dissipation (Pd)391W
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Type1PCSNChannel

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