IPU60R1K4C6 by Infineon Technologies – Specifications

Infineon Technologies IPU60R1K4C6 is a IPU60R1K4C6 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 3.2A 1.4Ω@1.1A,10V 28.4W 3.5V@90uA 1PCSNChannel TO-251 MOSFETs ROHS. This product comes in a TO-251 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 3.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@1.1A,10V
  • Power Dissipation (Pd): 28.4W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@90uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 200pF@100V
  • Total Gate Charge (Qg@Vgs): 9.4nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPU60R1K4C6

Model NumberIPU60R1K4C6
Model NameInfineon Technologies IPU60R1K4C6
CategoryMOSFETs
BrandInfineon Technologies
Description650V 3.2A 1.4Ω@1.1A,10V 28.4W 3.5V@90uA 1PCSNChannel TO-251 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-251
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)3.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.4Ω@1.1A,10V
Power Dissipation (Pd)28.4W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@90uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)200pF@100V
Total Gate Charge (Qg@Vgs)9.4nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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