IPU60R2K1CEAKMA1 by Infineon Technologies – Specifications

Infineon Technologies IPU60R2K1CEAKMA1 is a IPU60R2K1CEAKMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 3.7A 38W 2.1Ω@760mA,10V 3.5V@60uA 1PCSNChannel TO-251-3 MOSFETs ROHS. This product comes in a TO-251-3 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 3.7A
• Power Dissipation (Pd): 38W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 2.1Ω@760mA,10V
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@60uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 140pF@100V
• Total Gate Charge (Qg@Vgs): 6.7nC@10V
• Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.