IPU80R1K0CE by Infineon Technologies – Specifications

Infineon Technologies IPU80R1K0CE is a IPU80R1K0CE from Infineon Technologies, part of the MOSFETs. It is designed for 800V 5.7A 950mΩ@10V,3.6A 83W 3.9V@250uA 1PCSNChannel TO-251-3 MOSFETs ROHS. This product comes in a TO-251-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 5.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 950mΩ@10V,3.6A
  • Power Dissipation (Pd): 83W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPU80R1K0CE

Model NumberIPU80R1K0CE
Model NameInfineon Technologies IPU80R1K0CE
CategoryMOSFETs
BrandInfineon Technologies
Description800V 5.7A 950mΩ@10V,3.6A 83W 3.9V@250uA 1PCSNChannel TO-251-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-251-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)5.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)950mΩ@10V,3.6A
Power Dissipation (Pd)83W
Gate Threshold Voltage (Vgs(th)@Id)3.9V@250uA
Type1PCSNChannel

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