IPU80R1K2P7AKMA1 by Infineon Technologies – Specifications

Infineon Technologies IPU80R1K2P7AKMA1 is a IPU80R1K2P7AKMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 4.5A 1.2Ω@1.7A,10V 37W 3.5V@80uA 1PCSNChannel TO-251-3 MOSFETs ROHS. This product comes in a TO-251-3 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 800V
• Continuous Drain Current (Id): 4.5A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@1.7A,10V
• Power Dissipation (Pd): 37W
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@80uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 300pF@500V
• Total Gate Charge (Qg@Vgs): 11nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.