IPU80R2K4P7AKMA1 by Infineon Technologies – Specifications

Infineon Technologies IPU80R2K4P7AKMA1 is a IPU80R2K4P7AKMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 2.5A 2.4Ω@800mA,10V 22W 3.5V@40uA 1PCSNChannel TO-251-3 MOSFETs ROHS. This product comes in a TO-251-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 2.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.4Ω@800mA,10V
  • Power Dissipation (Pd): 22W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@40uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 150pF@500V
  • Total Gate Charge (Qg@Vgs): 7.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPU80R2K4P7AKMA1

Full Specifications of IPU80R2K4P7AKMA1

Model NumberIPU80R2K4P7AKMA1
Model NameInfineon Technologies IPU80R2K4P7AKMA1
CategoryMOSFETs
BrandInfineon Technologies
Description800V 2.5A 2.4Ω@800mA,10V 22W 3.5V@40uA 1PCSNChannel TO-251-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-251-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)2.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.4Ω@800mA,10V
Power Dissipation (Pd)22W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@40uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)150pF@500V
Total Gate Charge (Qg@Vgs)7.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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