IPU80R4K5P7AKMA1 by Infineon Technologies – Specifications

Infineon Technologies IPU80R4K5P7AKMA1 is a IPU80R4K5P7AKMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 1.5A 13W 4.5Ω@400mA,10V 3.5V@200uA 1PCSNChannel TO-251-3-21 MOSFETs ROHS. This product comes in a TO-251-3-21 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 1.5A
  • Power Dissipation (Pd): 13W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5Ω@400mA,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@200uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 250pF@500V
  • Total Gate Charge (Qg@Vgs): 4nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.1 grams.

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Full Specifications of IPU80R4K5P7AKMA1

Model NumberIPU80R4K5P7AKMA1
Model NameInfineon Technologies IPU80R4K5P7AKMA1
CategoryMOSFETs
BrandInfineon Technologies
Description800V 1.5A 13W 4.5Ω@400mA,10V 3.5V@200uA 1PCSNChannel TO-251-3-21 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.100 grams / 0.038801 oz
Package / CaseTO-251-3-21
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)1.5A
Power Dissipation (Pd)13W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.5Ω@400mA,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@200uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)250pF@500V
Total Gate Charge (Qg@Vgs)4nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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