IPW50R190CE by Infineon Technologies – Specifications

Infineon Technologies IPW50R190CE is a IPW50R190CE from Infineon Technologies, part of the MOSFETs. It is designed for 500V 24.8A 152W 190mΩ@6.2A,13V 3.5V@510uA 1PCSNChannel TO-247-3-41 MOSFETs ROHS. This product comes in a TO-247-3-41 package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 24.8A
• Power Dissipation (Pd): 152W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 190mΩ@6.2A,13V
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@510uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.137nF@100V
• Total Gate Charge (Qg@Vgs): 47.2nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.