IPW50R350CP by Infineon Technologies – Specifications

Infineon Technologies IPW50R350CP is a IPW50R350CP from Infineon Technologies, part of the MOSFETs. It is designed for 500V 10A 350mΩ@5.6A,10V 89W 3.5V@370uA 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 10A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 350mΩ@5.6A,10V
  • Power Dissipation (Pd): 89W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@370uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.02nF@100V
  • Total Gate Charge (Qg@Vgs): 25nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.55 grams.

Full Specifications of IPW50R350CP

Model NumberIPW50R350CP
Model NameInfineon Technologies IPW50R350CP
CategoryMOSFETs
BrandInfineon Technologies
Description500V 10A 350mΩ@5.6A,10V 89W 3.5V@370uA 1PCSNChannel TO-247-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.550 grams / 0.301593 oz
Package / CaseTO-247-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)10A
Drain Source On Resistance (RDS(on)@Vgs,Id)350mΩ@5.6A,10V
Power Dissipation (Pd)89W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@370uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.02nF@100V
Total Gate Charge (Qg@Vgs)25nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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