Infineon Technologies IPW60R037P7XKSA1 is a IPW60R037P7XKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 76A 255W 37mΩ@10V,29.5A [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 76A
- Power Dissipation (Pd): 255W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 37mΩ@10V,29.5A
- Gate Threshold Voltage (Vgs(th)@Id): [email protected]
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 5.243nF@400V
- Total Gate Charge (Qg@Vgs): 121nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.78 grams.
More on IPW60R037P7XKSA1
Full Specifications of IPW60R037P7XKSA1
Model Number | IPW60R037P7XKSA1 |
Model Name | Infineon Technologies IPW60R037P7XKSA1 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 650V 76A 255W 37mΩ@10V,29.5A [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 7.780 grams / 0.274432 oz |
Package / Case | TO-247-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 650V |
Continuous Drain Current (Id) | 76A |
Power Dissipation (Pd) | 255W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 37mΩ@10V,29.5A |
Gate Threshold Voltage (Vgs(th)@Id) | [email protected] |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 5.243nF@400V |
Total Gate Charge (Qg@Vgs) | 121nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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