IPW60R037P7XKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPW60R037P7XKSA1 is a IPW60R037P7XKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 76A 255W 37mΩ@10V,29.5A [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 76A
  • Power Dissipation (Pd): 255W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 37mΩ@10V,29.5A
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.243nF@400V
  • Total Gate Charge (Qg@Vgs): 121nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.78 grams.

Full Specifications of IPW60R037P7XKSA1

Model NumberIPW60R037P7XKSA1
Model NameInfineon Technologies IPW60R037P7XKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 76A 255W 37mΩ@10V,29.5A [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.780 grams / 0.274432 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)76A
Power Dissipation (Pd)255W
Drain Source On Resistance (RDS(on)@Vgs,Id)37mΩ@10V,29.5A
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.243nF@400V
Total Gate Charge (Qg@Vgs)121nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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