IPW60R045P7XKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPW60R045P7XKSA1 is a IPW60R045P7XKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 61A 201W 45mΩ@22.5A,10V [email protected] 1PCSNChannel TO-247-3-41 MOSFETs ROHS. This product comes in a TO-247-3-41 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 61A
• Power Dissipation (Pd): 201W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 45mΩ@22.5A,10V
• Gate Threshold Voltage (Vgs(th)@Id): [email protected]
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 3.891nF@400V
• Total Gate Charge (Qg@Vgs): 90nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.