IPW65R037C6FKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPW65R037C6FKSA1 is a IPW65R037C6FKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 83.2A 37mΩ@10V,33.1A 500W [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 83.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 37mΩ@10V,33.1A
  • Power Dissipation (Pd): 500W
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 7.24nF@100V
  • Total Gate Charge (Qg@Vgs): 330nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.2 grams.

Full Specifications of IPW65R037C6FKSA1

Model NumberIPW65R037C6FKSA1
Model NameInfineon Technologies IPW65R037C6FKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 83.2A 37mΩ@10V,33.1A 500W [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.200 grams / 0.289247 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)83.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)37mΩ@10V,33.1A
Power Dissipation (Pd)500W
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Type1PCSNChannel
Input Capacitance (Ciss@Vds)7.24nF@100V
Total Gate Charge (Qg@Vgs)330nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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