IPW65R041CFDFKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPW65R041CFDFKSA1 is a IPW65R041CFDFKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 68.5A 500W 41mΩ@33.1A,10V [email protected] 1PCSNChannel TO-247-3-1 MOSFETs ROHS. This product comes in a TO-247-3-1 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 68.5A
  • Power Dissipation (Pd): 500W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 41mΩ@33.1A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 8.4nF@100V
  • Total Gate Charge (Qg@Vgs): 300nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IPW65R041CFDFKSA1

Model NumberIPW65R041CFDFKSA1
Model NameInfineon Technologies IPW65R041CFDFKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 68.5A 500W 41mΩ@33.1A,10V [email protected] 1PCSNChannel TO-247-3-1 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247-3-1
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)68.5A
Power Dissipation (Pd)500W
Drain Source On Resistance (RDS(on)@Vgs,Id)41mΩ@33.1A,10V
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Type1PCSNChannel
Input Capacitance (Ciss@Vds)8.4nF@100V
Total Gate Charge (Qg@Vgs)300nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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