IPW65R080CFDAFKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPW65R080CFDAFKSA1 is a IPW65R080CFDAFKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 43.3A 80mΩ@17.6A,10V 391W [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 43.3A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@17.6A,10V
• Power Dissipation (Pd): 391W
• Gate Threshold Voltage (Vgs(th)@Id): [email protected]
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 4.44nF@100V
• Total Gate Charge (Qg@Vgs): 161nC@10V
• Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.55 grams.