IPW65R095C7 by Infineon Technologies – Specifications

Infineon Technologies IPW65R095C7 is a IPW65R095C7 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 24A 95mΩ@10V,11.8A 128W 4V@590uA 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 24A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 95mΩ@10V,11.8A
  • Power Dissipation (Pd): 128W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@590uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.15 grams.

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Full Specifications of IPW65R095C7

Model NumberIPW65R095C7
Model NameInfineon Technologies IPW65R095C7
CategoryMOSFETs
BrandInfineon Technologies
Description650V 24A 95mΩ@10V,11.8A 128W 4V@590uA 1PCSNChannel TO-247-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.150 grams / 0.287483 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)24A
Drain Source On Resistance (RDS(on)@Vgs,Id)95mΩ@10V,11.8A
Power Dissipation (Pd)128W
Gate Threshold Voltage (Vgs(th)@Id)4V@590uA
Type1PCSNChannel

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