IPW65R099C6 by Infineon Technologies – Specifications

Infineon Technologies IPW65R099C6 is a IPW65R099C6 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 38A 278W 99mΩ@10V,12.8A [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 38A
  • Power Dissipation (Pd): 278W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 99mΩ@10V,12.8A
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.15 grams.

More on IPW65R099C6

Full Specifications of IPW65R099C6

Model NumberIPW65R099C6
Model NameInfineon Technologies IPW65R099C6
CategoryMOSFETs
BrandInfineon Technologies
Description650V 38A 278W 99mΩ@10V,12.8A [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.150 grams / 0.216935 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)38A
Power Dissipation (Pd)278W
Drain Source On Resistance (RDS(on)@Vgs,Id)99mΩ@10V,12.8A
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Type1PCSNChannel

Compare Infineon Technologies - IPW65R099C6 With Other 200 Models

Related Models - IPW65R099C6 Alternative

Scroll to Top