IPW65R110CFD by Infineon Technologies – Specifications

Infineon Technologies IPW65R110CFD is a IPW65R110CFD from Infineon Technologies, part of the MOSFETs. It is designed for 650V 31.2A 110mΩ@10V,12.7A 277.8W [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 31.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@10V,12.7A
  • Power Dissipation (Pd): 277.8W
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.9 grams.

More on IPW65R110CFD

Full Specifications of IPW65R110CFD

Model NumberIPW65R110CFD
Model NameInfineon Technologies IPW65R110CFD
CategoryMOSFETs
BrandInfineon Technologies
Description650V 31.2A 110mΩ@10V,12.7A 277.8W [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.900 grams / 0.278665 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)31.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)110mΩ@10V,12.7A
Power Dissipation (Pd)277.8W
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Type1PCSNChannel

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