IPW65R125C7XKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPW65R125C7XKSA1 is a IPW65R125C7XKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 18A 101W 125mΩ@8.9A,10V 4V@440uA 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 18A
  • Power Dissipation (Pd): 101W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 125mΩ@8.9A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@440uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.67nF@400V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.55 grams.

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Full Specifications of IPW65R125C7XKSA1

Model NumberIPW65R125C7XKSA1
Model NameInfineon Technologies IPW65R125C7XKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 18A 101W 125mΩ@8.9A,10V 4V@440uA 1PCSNChannel TO-247-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.550 grams / 0.301593 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)18A
Power Dissipation (Pd)101W
Drain Source On Resistance (RDS(on)@Vgs,Id)125mΩ@8.9A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@440uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.67nF@400V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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