IPW65R190CFD by Infineon Technologies – Specifications

Infineon Technologies IPW65R190CFD is a IPW65R190CFD from Infineon Technologies, part of the MOSFETs. It is designed for 650V 17.5A 190mΩ@10V,7.3A 151W 4.5V@730uA 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 17.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 190mΩ@10V,7.3A
  • Power Dissipation (Pd): 151W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@730uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.99 grams.

More on IPW65R190CFD

Full Specifications of IPW65R190CFD

Model NumberIPW65R190CFD
Model NameInfineon Technologies IPW65R190CFD
CategoryMOSFETs
BrandInfineon Technologies
Description650V 17.5A 190mΩ@10V,7.3A 151W 4.5V@730uA 1PCSNChannel TO-247-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.990 grams / 0.281839 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)17.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)190mΩ@10V,7.3A
Power Dissipation (Pd)151W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@730uA
Type1PCSNChannel

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