IPW65R230CFD7AXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPW65R230CFD7AXKSA1 is a IPW65R230CFD7AXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 11A 230mΩ@5.2A,10V 63W 4.5V@260uA 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 11A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 230mΩ@5.2A,10V
  • Power Dissipation (Pd): 63W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@260uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.044nF@400V
  • Total Gate Charge (Qg@Vgs): 23nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.55 grams.

More on IPW65R230CFD7AXKSA1

Full Specifications of IPW65R230CFD7AXKSA1

Model NumberIPW65R230CFD7AXKSA1
Model NameInfineon Technologies IPW65R230CFD7AXKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 11A 230mΩ@5.2A,10V 63W 4.5V@260uA 1PCSNChannel TO-247-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.550 grams / 0.301593 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)11A
Drain Source On Resistance (RDS(on)@Vgs,Id)230mΩ@5.2A,10V
Power Dissipation (Pd)63W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@260uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.044nF@400V
Total Gate Charge (Qg@Vgs)23nC@10V
Operating Temperature-40℃~+150℃@(Tj)

Compare Infineon Technologies - IPW65R230CFD7AXKSA1 With Other 200 Models

Related Models - IPW65R230CFD7AXKSA1 Alternative

Scroll to Top