IPW65R310CFD by Infineon Technologies – Specifications

Infineon Technologies IPW65R310CFD is a IPW65R310CFD from Infineon Technologies, part of the MOSFETs. It is designed for 650V 11.4A 310mΩ@4.4A,10V 104.2W 4.5V@440uA 1PCSNChannel TO-247 MOSFETs ROHS. This product comes in a TO-247 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 11.4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 310mΩ@4.4A,10V
  • Power Dissipation (Pd): 104.2W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@440uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.1nF@100V
  • Total Gate Charge (Qg@Vgs): 41nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPW65R310CFD

Model NumberIPW65R310CFD
Model NameInfineon Technologies IPW65R310CFD
CategoryMOSFETs
BrandInfineon Technologies
Description650V 11.4A 310mΩ@4.4A,10V 104.2W 4.5V@440uA 1PCSNChannel TO-247 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)11.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)310mΩ@4.4A,10V
Power Dissipation (Pd)104.2W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@440uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.1nF@100V
Total Gate Charge (Qg@Vgs)41nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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