IPW90R120C3XKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPW90R120C3XKSA1 is a IPW90R120C3XKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 900V 36A 120mΩ@10V,26A 417W [email protected] 1PCSNChannel TO-247-3-21 MOSFETs ROHS. This product comes in a TO-247-3-21 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 900V
  • Continuous Drain Current (Id): 36A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 120mΩ@10V,26A
  • Power Dissipation (Pd): 417W
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.8nF@100V
  • Total Gate Charge (Qg@Vgs): 270nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IPW90R120C3XKSA1

Model NumberIPW90R120C3XKSA1
Model NameInfineon Technologies IPW90R120C3XKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description900V 36A 120mΩ@10V,26A 417W [email protected] 1PCSNChannel TO-247-3-21 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247-3-21
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)900V
Continuous Drain Current (Id)36A
Drain Source On Resistance (RDS(on)@Vgs,Id)120mΩ@10V,26A
Power Dissipation (Pd)417W
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.8nF@100V
Total Gate Charge (Qg@Vgs)270nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - IPW90R120C3XKSA1 With Other 200 Models

Related Models - IPW90R120C3XKSA1 Alternative

Scroll to Top