IPZ40N04S5L7R4ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPZ40N04S5L7R4ATMA1 is a IPZ40N04S5L7R4ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 40A 34W 7.4mΩ@20A,10V 2V@10uA 1PCSNChannel TSDSON-8 MOSFETs ROHS. This product comes in a TSDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 40A
  • Power Dissipation (Pd): 34W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.4mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@10uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 920pF@25V
  • Total Gate Charge (Qg@Vgs): 17nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPZ40N04S5L7R4ATMA1

Full Specifications of IPZ40N04S5L7R4ATMA1

Model NumberIPZ40N04S5L7R4ATMA1
Model NameInfineon Technologies IPZ40N04S5L7R4ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description40V 40A 34W 7.4mΩ@20A,10V 2V@10uA 1PCSNChannel TSDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTSDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)40A
Power Dissipation (Pd)34W
Drain Source On Resistance (RDS(on)@Vgs,Id)7.4mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)2V@10uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)920pF@25V
Total Gate Charge (Qg@Vgs)17nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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