IQE008N03LM5ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IQE008N03LM5ATMA1 is a IQE008N03LM5ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 0.85mΩ@20A,10V 2V@250uA 1PCSNChannel TSON-8-EP(3.3x3.3) MOSFETs ROHS. This product comes in a TSON-8-EP(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 27A;253A
• Power Dissipation (Pd): 2.1W;89W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 0.85mΩ@20A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 5.7nF@15V
• Total Gate Charge (Qg@Vgs): 64nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.6 grams.