Infineon Technologies IR2011STRPBF is a IR2011STRPBF from Infineon Technologies, part of the Gate Drive ICs. It is designed for 2 MOSFET 1A 35ns 20ns 10V~20V 1A SOIC-8 Gate Drive ICs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Driven Configuration: High Side;Low Side
- Operating Temperature: -40℃~+150℃@(Tj)
- Number of Drivers: 2
- Load Type: MOSFET
- Peak Output Current(source): 1A
- Rise Time: 35ns
- Fall Time: 20ns
- Supply Voltage: 10V~20V
- Peak Output Current(sink): 1A
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.226 grams.
More on IR2011STRPBF
Full Specifications of IR2011STRPBF
Model Number | IR2011STRPBF |
Model Name | Infineon Technologies IR2011STRPBF |
Category | Gate Drive ICs |
Brand | Infineon Technologies |
Description | 2 MOSFET 1A 35ns 20ns 10V~20V 1A SOIC-8 Gate Drive ICs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.226 grams / 0.007972 oz |
Package / Case | SOIC-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Driven Configuration | High Side;Low Side |
Operating Temperature | -40℃~+150℃@(Tj) |
Number of Drivers | 2 |
Load Type | MOSFET |
Peak Output Current(source) | 1A |
Rise Time | 35ns |
Fall Time | 20ns |
Supply Voltage | 10V~20V |
Peak Output Current(sink) | 1A |
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