Infineon Technologies IR2102SPBF is a IR2102SPBF from Infineon Technologies, part of the Gate Drive ICs. It is designed for Half Bridge 2 210mA 100ns 50ns 10V~20V 360mA SOIC-8 Gate Drive ICs ROHS. This product comes in a SOIC-8 package and is sold as Tube-packed. Key features include:
- Driven Configuration: Half Bridge
- Operating Temperature: -40℃~+150℃@(Tj)
- Number of Drivers: 2
- Load Type: IGBT;MOSFET
- Peak Output Current(source): 210mA
- Rise Time: 100ns
- Fall Time: 50ns
- Supply Voltage: 10V~20V
- Peak Output Current(sink): 360mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.168 grams.
More on IR2102SPBF
Full Specifications of IR2102SPBF
Model Number | IR2102SPBF |
Model Name | Infineon Technologies IR2102SPBF |
Category | Gate Drive ICs |
Brand | Infineon Technologies |
Description | Half Bridge 2 210mA 100ns 50ns 10V~20V 360mA SOIC-8 Gate Drive ICs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.168 grams / 0.005926 oz |
Package / Case | SOIC-8 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Driven Configuration | Half Bridge |
Operating Temperature | -40℃~+150℃@(Tj) |
Number of Drivers | 2 |
Load Type | IGBT;MOSFET |
Peak Output Current(source) | 210mA |
Rise Time | 100ns |
Fall Time | 50ns |
Supply Voltage | 10V~20V |
Peak Output Current(sink) | 360mA |
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