Infineon Technologies IR2113PBF is a IR2113PBF from Infineon Technologies, part of the Gate Drive ICs. It is designed for Half Bridge 2 2A 25ns 17ns 3.3V~20V 2A DIP-14 Gate Drive ICs ROHS. This product comes in a DIP-14 package and is sold as Tube-packed. Key features include:
- Driven Configuration: Half Bridge
- Operating Temperature: -40℃~+150℃@(Tj)
- Number of Drivers: 2
- Load Type: IGBT;MOSFET
- Peak Output Current(source): 2A
- Rise Time: 25ns
- Fall Time: 17ns
- Supply Voltage: 3.3V~20V
- Peak Output Current(sink): 2A
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.93 grams.
More on IR2113PBF
Full Specifications of IR2113PBF
Model Number | IR2113PBF |
Model Name | Infineon Technologies IR2113PBF |
Category | Gate Drive ICs |
Brand | Infineon Technologies |
Description | Half Bridge 2 2A 25ns 17ns 3.3V~20V 2A DIP-14 Gate Drive ICs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.930 grams / 0.068079 oz |
Package / Case | DIP-14 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Driven Configuration | Half Bridge |
Operating Temperature | -40℃~+150℃@(Tj) |
Number of Drivers | 2 |
Load Type | IGBT;MOSFET |
Peak Output Current(source) | 2A |
Rise Time | 25ns |
Fall Time | 17ns |
Supply Voltage | 3.3V~20V |
Peak Output Current(sink) | 2A |
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