IRF100B201 by Infineon Technologies – Specifications

Infineon Technologies IRF100B201 is a IRF100B201 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 192A 441W 4.2mΩ@10V,115A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 192A
  • Power Dissipation (Pd): 441W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.2mΩ@10V,115A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.5nF@50V
  • Total Gate Charge (Qg@Vgs): 255nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.64 grams.

More on IRF100B201

Full Specifications of IRF100B201

Model NumberIRF100B201
Model NameInfineon Technologies IRF100B201
CategoryMOSFETs
BrandInfineon Technologies
Description100V 192A 441W 4.2mΩ@10V,115A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.640 grams / 0.093123 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)192A
Power Dissipation (Pd)441W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.2mΩ@10V,115A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.5nF@50V
Total Gate Charge (Qg@Vgs)255nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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