IRF100B202 by Infineon Technologies – Specifications

Infineon Technologies IRF100B202 is a IRF100B202 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 97A 8.6mΩ@10V,58A 221W 4V@150uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS. This product comes in a ITO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 97A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.6mΩ@10V,58A
  • Power Dissipation (Pd): 221W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@150uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.76 grams.

More on IRF100B202

Full Specifications of IRF100B202

Model NumberIRF100B202
Model NameInfineon Technologies IRF100B202
CategoryMOSFETs
BrandInfineon Technologies
Description100V 97A 8.6mΩ@10V,58A 221W 4V@150uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.760 grams / 0.097356 oz
Package / CaseITO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)97A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.6mΩ@10V,58A
Power Dissipation (Pd)221W
Gate Threshold Voltage (Vgs(th)@Id)4V@150uA
Type1PCSNChannel

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