IRF100P218AKMA1 by Infineon Technologies – Specifications

Infineon Technologies IRF100P218AKMA1 is a IRF100P218AKMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 209A 1.28mΩ@100A,10V 3.8V@278uA 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 209A
  • Power Dissipation (Pd): 3.8W;556W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.28mΩ@100A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@278uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 24nF@50V
  • Total Gate Charge (Qg@Vgs): 412nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.55 grams.

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Full Specifications of IRF100P218AKMA1

Model NumberIRF100P218AKMA1
Model NameInfineon Technologies IRF100P218AKMA1
CategoryMOSFETs
BrandInfineon Technologies
Description100V 209A 1.28mΩ@100A,10V 3.8V@278uA 1PCSNChannel TO-247-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.550 grams / 0.301593 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)209A
Power Dissipation (Pd)3.8W;556W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.28mΩ@100A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.8V@278uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)24nF@50V
Total Gate Charge (Qg@Vgs)412nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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